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微尺度内半导体PN结的非平衡态热力学研究

批准号51706029 学科分类工程热物理相关交叉领域 ( E0608 )
项目负责人叶怀宇 负责人职称研究员 依托单位重庆大学
资助金额24.00
万元
项目类别青年科学基金项目 研究期限2018 年 01 月 01 日 至
2020 年 12 月 31 日
中文主题词微尺度;非平衡态热力学;热感现象;PN结
英文主题词Micro-scale;non-equilibrium thermodynamics;thermal inductance;PN junction

摘要

中文摘要 由于微纳高频高功率半导体器件等领域的快速发展,在微尺度下研究能量传输和转换导致的热物理现象的要求显著增加。近期,本项目组发现了微时间尺度内氮化镓器件PN结中的热感现象,即通过PN结的快速变化电流引起了与其变化方向相反的成比例的温度变化。由此,在微时间尺度内,其内部能量变化可能不是连续的,并可能与能量输入的变化方向相反。本项目拟研究微尺度固态器件和各种材料特别是半导体PN结中的能量传输和转换,并通过非平衡态热力学、微空间以及微时间尺度热力学(包括热感现象)发展微尺度非平衡态热力学。包含了半导体PN结的半导体器件和半导体二维材料成为这项工作中主要研究目标。同时结合量子力学、分子动力学理论及非平衡态热力学理论,应用从微观尺度到宏观尺度多维度仿真方法为微尺度下的热力学分析打下良好的基础。并通过本研究为GaN、SiC以及半导体微纳材料及器件的研究提供新的思路,包括热力学优化方法、可靠性分析以及精确测试方法等。
英文摘要 Currently, the requirements for analysis of solid-state devices by the theory of micro-scale energy transport and conversion has dramatically increased due to the rapid development of nano technologies, high frequency devices, high power devices and etc. More recently, we approved the phenomena of thermal inductance in PN junction of GaN devices in micro-time scale. A rapid changing current through the PN junction induces a proportional temperature change, which is opposed to the change of thermal flow. It is indicated that internal energy variation may be not continuous, and even oppose to the change direction of the energy input in solid-state devices. We envision that the thermal inductance phenomena more widely exist in non-homogeneous materials and in the field of thermal analysis under energy changes in micro-time scale. The theory or phenomena of non-equilibrium thermodynamics, micro-scale heat transfer (include micro-time scale and micro-length scale), and thermal inductance leads to a new regime of thermodynamics. Notably, the definition of micro-scale non-equilibrium thermodynamics already contains the areas of non-equilibrium thermodynamics, micro-length scale thermodynamics and micro-time scale thermodynamics including the thermal inductance phenomena. The goal of this research proposal is to study the energy transport and conversion in micro-scale solid-state devices and various materials, especially in the PN junction of semiconductors. Due to the micro scale thermal phenomena may occur in either length or time scale or both, the semiconductor devices and 2D materials become to be the most attractive research targets in this work. Therefore, we will conduct studies to develop the theory and methodology based on quantum mechanics, molecular dynamics and micro-scale non-equilibrium thermodynamics, enhance transient thermal analysis on the GaN, SiC and 2D semiconductor materials under multi scales, optimize the thermal performance, analyze the reliability and improve the methodology of measurements.
结题摘要

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